EDN

Using CMOS and BiCMOS Logic Devices

As general purpose components, logic devices are used at different frequencies and power supply voltages in many different varieties of applications. This large diversity has produced the need to ...
EDN

Atmel preps SiGe/BiCMOS process for RF apps

COLORADO SPRINGS, Colo. — Atmel Corp. will emphasize silicon germanium on BiCMOS — with specialized RF CMOS processes spun from the SiGe/BiCMOS as a fringe benefit — to realize power and cost ...
Electronic Design

Complementary SiGe BiCMOS Facilitates Precision High-Speed Analog

To extend its BiCOM biCMOS process into the next generation, Texas Instruments is tapping the benefits of complementary silicon-germanium (SiGe) bipolar transistors. TI has developed a third ...
Nature

Sub-terahertz feedback interferometry and imaging with emitters in 130 nm BiCMOS technology

In this work, we present the effect of self-mixing in compact terahertz emitters implemented in a 130 nm SiGe BiCMOS technology. The devices are based on a differential Colpitts oscillator topology ...
Design-Reuse

Comparison of One and Two Stage RF Rectifiers Designed in FDSOI 28 nm and BiCMOS 55 nm

The context of this article is a low power application: RF energy harvesting. In this paper, we compare performances of two Dickson voltage rectifiers realized with two different technologies: FDSOI ...
Business Wire

NXP Boosts RF Innovation With Next Generation SiGe:C BiCMOS QUBIC4 Technology

EINDHOVEN, Netherlands--(BUSINESS WIRE)--NXP, the independent semiconductor company founded by Philips, today underpinned its leadership in radio frequency with highly advanced QUBIC4 BiCMOS silicon ...
Design-Reuse

Industry s first high-performance complementary BiCMOS technology delivers performance and power advantages for essential markets and applications

Today at its annual Technology Summit in California, GlobalFoundries (GF)(Nasdaq: GFS) announced the production release of its 130nm complementary Bi-CMOS (CBIC) platform, the company’s ...