Abstract: This paper proposes a diode-clamped linear amplifier (DCLA) using only n-channel MOSFETs applied by separated gate drive circuits. Conventional DCLA uses the source follower function of ...
Abstract: The design and analysis of GaN HEMT linear power amplifier to operate at 6 GHz frequency is presented in this work. The GaN HEMT with 800 nm gate length, was power matched at the frequency ...
Dimensions 1011.8 mm x 622.4 mm x 56 mm 970 mm x 564 mm x 74 mm ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback